| PART |
Description |
Maker |
| HY62LF16806B-C HY62LF16806B-DFC HY62LF16806B-DFI H |
512Kx16bit full CMOS SRAM
|
Hynix Semiconductor
|
| HY62LF16806A-SMC HY62LF16806A-DMC HY62LF16806A-DMI |
x16|2.5V|70/85/100|Super Low Power Slow SRAM - 8M x16 | 2.5V的| 70/85/100 |超级低功耗SRAM的速度 800
512Kx16bit full CMOS SRAM
|
Alpha Industries, Inc.
Hynix Semiconductor
|
| AS7C256 AS7C256-10 AS7C256-10JC AS7C256-10PC AS7C2 |
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix)
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 35 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDIP28
High Performance 32Kx8 CMOS SRAM 高性能32Kx8 CMOS SRAM
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDIP28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
|
ETC[ETC]
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
Alliance Semiconductor ...
|
| HY62UF16403ALLM HY62UF16403ALLM-I HY62UF16403ASLM |
256Kx16bit full CMOS SRAM
|
Hynix Semiconductor
|
| HY62SF16404C HY62SF16404C-DM85I HY62SF16404C-I HY6 |
256Kx16bit full CMOS SRAM
|
Hynix Semiconductor
|
| HY62SF16406E-SF HY62SF16406E-SFI HY62SF16406E-DF H |
256Kx16bit full CMOS SRAM
|
Hynix Semiconductor
|
| HY62LF16101C |
64K x 16bit Full CMOS SRAM
|
Hynix Semiconductor
|
| TC55V040AFT |
(TC55V040ATR/AFT) 8-Bit FULL CMOS SRAM
|
Toshiba
|
| HY62LF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| K5A3280YBA |
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM
|
SAMSUNG
|
| HY62UF1680 |
High speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits
|
HYNIX
|
